features silicon planar power zener diodes m e c h an i c al d at a case:do-35, glass case terminals: solderable per mil-std-202, method 208 polarity: cathode band marking: type number approx. weight: 0.13 grams. thermal resistance junction to ambient forw ard voltage at i f =200ma 300 1) s t o r age t e m pe r a t u r e r a nge t s - 5 5--- + 1 7 5 pow er dissipation at t amb =25 p tot 500 1) n o t e s : ( 1) valid provided that leads at a distance of 10 mm from case are kept at ambient temperature. 1 . 2 v /w symbol v f unit max typ min r ja junction temperature t j 175 mw 1n5221 - 1n52 71 zener diodes power dissipation: 500 mw d o - 3 5 ( g l a s s ) unit value symbol maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. dimensions in millimeters parameter parameter standard zener voltage tolerance is 20%. add suffix "a" for 10% tolerance, suffix "b" for 5% tolerance, suffix "c" for 2% tolerance, other tolerance, non standard and higher zener voltages are upon request. p age:p 3 - p 1 glass - encapsulate diodes guangdong hottech industrial co,. ltd.
nominal zener voltage 1) test current typical temperature of coeffizient v z i zt z zt @i zt z zk @ i zk =0.25ma v z @i zt i rm v r vm a ?? % / ?? m a v 1n5221 2.4 20 30 1200 -0.085 100 1.0 1n5222 2.5 20 30 1250 -0.085 100 1.0 1n5223 2.7 20 30 1300 -0.080 75 1.0 1n5224 2.8 20 30 1400 -0.080 75 1.0 1n5225 3.0 20 29 1600 -0.075 50 1.0 1n5226 3.3 20 28 1600 -0.070 25 1.0 1n5227 3.6 20 24 1700 -0.065 15 1.0 1n5228 3.9 20 23 1900 -0.060 10 1.0 1n5229 4.3 20 22 2000 -0.055 5.0 1.0 1n5230 4.7 20 19 1900 ?? 0.030 5.0 2.0 1n5231 5.1 20 17 1600 ?? 0.030 5.0 2.0 1n5232 5.6 20 11 1600 ?? 0.038 5.0 3.0 1n5233 6.0 20 7.0 1600 ?? 0.038 5.0 3.5 1n5234 6.2 20 7.0 1000 ?? 0.045 5.0 4.0 1n5235 6.8 20 5.0 750 ?? 0.050 3.0 5.0 1n5236 7.5 20 6.0 500 ?? 0.058 3.0 6.0 1n5237 8.2 20 8.0 500 ?? 0.062 3.0 6.5 1n5238 8.7 20 8.0 600 ?? 0.065 3.0 6.5 1n5239 9.1 20 10 600 ?? 0.068 3.0 7.0 1N5240 10 20 17 600 ?? 0.075 3.0 8.0 1n5241 11 20 22 600 ?? 0.076 2.0 8.4 1n5242 12 20 30 600 ?? 0.077 1.0 9.1 1n5243 13 10 13 600 ?? 0.079 0.5 9.9 1n5244 14 9.0 15 600 ?? 0.082 0.1 10 1n5245 15 8.5 16 600 ?? 0.082 0.1 11 1n5246 16 7.8 17 600 ?? 0.083 0.1 12 1n5247 17 7.4 19 600 ?? 0.084 0.1 13 1n5248 18 7.0 21 600 ?? 0.085 0.1 14 1n5249 19 6.6 23 600 ?? 0.086 0.1 14 1n5250 20 6.2 25 600 ?? 0.086 0.1 15 1n5251 22 5.6 29 600 ?? 0.087 0.1 17 1n5252 24 5.2 33 600 ?? 0.087 0.1 18 1n5253 25 5.0 35 600 ?? 0.089 0.1 19 1n5254 27 4.6 41 600 ?? 0.090 0.1 21 1n5255 28 4.5 44 600 ?? 0.091 0.1 21 1n5256 30 4.2 49 600 ?? 0.091 0.1 23 1n5257 33 3.8 58 700 ?? 0.092 0.1 25 1n5258 36 3.4 70 700 ?? 0.093 0.1 27 1n5259 39 3.2 80 800 ?? 0.094 0.1 30 1n5260 43 3.0 93 900 ?? 0.095 0.1 33 1n5261 47 2.7 105 1000 ?? 0.095 0.1 36 1n5262 51 2.5 125 1100 ?? 0.096 0.1 39 1n5263 56 2.2 150 1300 ?? 0.096 0.1 43 1n5264 60 2.1 170 1400 ?? 0.097 0.1 46 1n5265 62 2.0 185 1400 ?? 0.097 0.1 47 1n5266 68 1.8 230 1600 ?? 0.097 0.1 52 1n5267 75 1.7 270 1700 ?? 0.098 0.1 56 1n5268 85 1.5 330 2000 ?? 0.098 0.1 62 1n5269 87 1.4 370 2200 ?? 0.099 0.1 68 1n5270 91 1.4 400 2300 ?? 0.099 0.1 69 1n5271 100 1.3 500 2600 ?? 0.099 0.1 76 electrical characteristics (t a =25 ?? ) maximum reverse leakage current type maximum dynamic impedance 1) p age:p 3 - p 2 glass - encapsulate diodes guangdong hottech industrial co,. ltd.
fi g. 1 -- breakdown characteri sti cs fi g. 2 -- admi ssi ble power di ssi pati on versus ambi ent temperature mw 500 400 300 100 200 0 0 100 200 ?? p tot t amb ma 50 40 30 10 20 0 1 n 5 2 24 510 i z 20 15 30 v 25 v z 1 n 5 2 28 1 n 5 2 29 1 n 5 2 30 1 n 5 2 31 1 n 5 2 32 1 n 5 2 34 1 n 5 2 35 1 n 5 2 39 1 n 5 2 41 1 n 5 2 42 1 n 5 2 45 1 n 5 2 50 1 n 5 2 52 test current iz=20ma p age:p 3 - p 3 glass - encapsulate diodes guangdong hottech industrial co,. ltd.
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